Product Summary

The MBN1200D33A is an IGBT module with high speed and low noise.

Parametrics

MBN600C33A absolute maximum ratings: (1)Collector-Emitter Voltage: 3,300 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current DC: 1,200 A; (4)Forward Current DC: 1,200 A; (5)Collector Power Dissipation: 12,000 W; (6)Junction Temperature: -40 ~ +125 ℃; (7)Storage Temperature: -40 ~ +125 ℃; (8)Isolation Voltage: 5400 VRMS (AC 1minute) ; (9)Screw Torque Terminals (M4/M8): 2/10 N·m, Mounting: 6 N·m.

Features

MBN600C33A features: (1)High thermal fatigue durability (delta Tc=70℃,N>20,000cycles); (2)Low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).

Diagrams

MBN600C33A block diagram