(China (Mainland))
Product Summary
The 2SC2395 is a silicon NPN epitaxial planar type transistor. It is suitable for 2-30MHz SSB linear power amplifier applications.
Parametrics
2SC2395 absolute maximum ratings: (1)collector base voltage, VCBO: 40V; (2)collector emitter voltage, VCES: 40V; (3)collector emitter voltage, VCEO: 18V; (4)emitter base voltage, VEBO: 4V; (5)collector current, IC: 5A; (6)collector power dissipation, PC: 40W; (7)junction temperature, Tj: 175℃; (8)storage temperature range, Tstg: -65 to 175℃.
Features
2SC2395 features: (1)specified 12.5V, 28MHz haraticeristics; (2)output power: Po=10Wpep min; (3)power gain: GP=17dB min; (4)collector effciency: ηC=35% min; (5)intermodulation distortion: IMD=-30dB max.
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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