(China (Mainland))
Product Summary
The 2SC2652 is a silicon NPN epitaxial planar type transistor. The device is suitable for 2-30MHz SSB linear power amplifier applications.
Parametrics
2SC2652 absolute maximum ratings: (1)collector base voltage, VCBO: 85V; (2)collector-emitter voltage, VCES: 85V; (3)collector-emitter voltage, VCEO: 55V; (4)emitter base voltage, VEBO: 4V; (5)collector current, IC: 20A; (6)collector power dissipation, PC: 300W; (7)junction temperature, Tj: 175℃; (8)storage temperature range, Tstg: -65 to 175℃.
Features
2SC2652 features: (1)specifried 50V, 28MHz characteristics; (2)output power: Po=200WPEP; (3)power gain: Gp=13dB min; (4)collector efficiency: ηC=35% min; (5)intermodulation distortion: IMD=-30dB max.
Diagrams
 |
 2SC2000 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC2001 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC2002 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC2003 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC2020 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC2021 |
Other |
|
Data Sheet |
Negotiable |
|
||||
