(China (Mainland))
Product Summary
The 2SD2704K is an Epitaxial planar type NPN silicon transistor.
Parametrics
2SD2704K absolute maximum ratings: (1)Collector-base voltage, VCBO: 50V; (2)Collector-emitter voltage, VCEO: 20V; (3)Emitter-base voltage, VEBO: 25V; (4)Collector current, IC: 0.3A; (5)Collector power dissipation, PC: 0.2W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to 150℃.
Features
2SD2704K features: (1)High DC current gain. hFE = 820 to 2700; (2)High emitter-base voltage. VEBO = 25V (Min.) ; (3)Low Ron Ron= 0.7Ω (Typ.) .
Diagrams
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Data Sheet |
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2SD2704KT146 |
ROHM Semiconductor |
Transistors Bipolar (BJT) TRANSISTOR BIPOLAR NPN; 30Vebo; 0.3A |
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