(China (Mainland))
Product Summary
The 2SK1217 is an N channel silicon power MOSFET. It is suitable for switching regulators, UPS, DC-DC converters and general purpose power amplifier.
Parametrics
2SK1217 absolute maximum ratings: (1)drain-source voltage, VDSS: 900V; (2)continuous drain current, ID: 8A; (3)pulsed drain current, ID(pulse): 23A; (4)continuous reverse drain current, IDR: 8A; (5)gate-source peak votlage, VGSS: ±30V; (6)max power dissipation, PD: 100W; (7)operating and storage temperature range, Tch: 150℃; Tstg: -55 to 150℃.
Features
2SK1217 features: (1)high speed switching; (2)low on resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGSS=±30V guarantee; (7)avalanche-proof.
Diagrams
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