(China (Mainland))
Product Summary
The 2SK2843 is a silicon N channel MOS type field effect ransistor. It is suitable for high speed, high current switching applications, chopper regulators, DC-DC converter and motor drive applications.
Parametrics
2SK2843 absolute maximum ratings: (1)drain-source voltage, VDSS: 600V; (2)drain-gate voltage, VDGR: 600V; (3)gate-source voltage, VGSS: ±30V; (4)drain current, ID: 10A; IDP: 40A; (5)drain power dissipation, PD: 45W; (6)single pulse avalanche energy, EAS: 363mJ; (7)avalanche current, IAR: 10A; (8)repetitive avalanche energy, EAR: 5.0.mJ; (9)channel temeprature, Tch: 150℃; (10)storage temperature range, Tstg: -55 to 150℃.
Features
2SK2843 features: (1)low drain source on resistance: RDS(ON)=0.54Ω typ; (2)high forward transfer admittance: |Yfs|=9.0S typ; (3)low leakage current: IDSS=10μA max; (4)enhancement-mode: Vth=2.0-4.0V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK2843 |
Other |
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Data Sheet |
Negotiable |
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2SK2843(Q) |
Toshiba |
MOSFET MOSFET N-Ch 600V 10A Rdson=0.75Ohm |
Data Sheet |
Negotiable |
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