(China (Mainland))
Product Summary
The 2SK4075-ZK-E1 is an N-channel MOS FET designed for high current switching applications.
Parametrics
2SK4075-ZK-E1 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V), VDSS: 40 V; (2)Gate to Source Voltage (VDS = 0 V), VGSS: ±20 V; (3)Drain Current (DC) (TC = 25℃), ID(DC): ±60 A; (4)Drain Current (pulse), ID(pulse): ±180 A; (5)Total Power Dissipation (TC = 25℃), PT1: 52 W; (6)Total Power Dissipation (TA = 25℃), PT2: 1.0 W; (7)Channel Temperature, Tch: 150℃; (8)Storage Temperature, Tstg: –55 to +150℃; (9)Single Avalanche Current, IAS: 28 A ; (10)Single Avalanche Energy, EAS: 78 mJ.
Features
2SK4075-ZK-E1 features: (1)Low on-state resistance: RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 30 A); RDS(on)2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 15 A); (2)Low Ciss: Ciss = 2900 pF TYP; (3)Logic level drive type.
Diagrams
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