(China (Mainland))
Product Summary
The 2sk2543 is a silicon N Channel MOS Type Field Effect Transistor. It is suitable for Switching Regulator Applications.
Parametrics
2sk2543 absolute maximum ratings: (1)Drain-source voltage, VDSS: 500 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 500 V; (3)Gate-source voltage, VGSS: ±30 V; (4)Drain current, DC, ID: 8 A; Pulse, IDP: 32 A; (5)Drain power dissipation (Tc = 25℃), PD: 40 W; (6)Single pulse avalanche energy, EAS: 312 mJ; (7)Avalanche current, IAR: 8 A; (8)Repetitive avalanche energy, EAR: 4 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55~150℃.
Features
2sk2543 features: (1)Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.); (2)High forward transfer admittance: |Yfs| = 7.0 S (typ.); (3)low leakage current: IDSS = 100 μA (max) (VDS = 500 V); (4)Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 2SK2543(Q,T) |
Toshiba |
MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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Quantity | ||||
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2SK2002-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2003-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK2007 |
Other |
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Data Sheet |
Negotiable |
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2SK2008 |
Other |
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Data Sheet |
Negotiable |
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2SK2009 |
Other |
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Data Sheet |
Negotiable |
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2SK2010 |
Other |
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Data Sheet |
Negotiable |
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