(China (Mainland))
Product Summary
The BSS65R is a high speed transistor. It is suitable for Low Power, Switching, High Frecvency.
Parametrics
BSS65R absolute maximum ratings: (1)Collector-Base Voltage, VCBO: -12 V; (2)Collector-Emitter Voltage, VCEO: -12 V; (3)Emitter-Base Voltage, VEBO: -4 V; (4)Peak Pulse Current, ICM: -200 mA; (5)Continuous Collector Current, IC: -100 mA; (6)Base Current, IC: -50 mA; (7)Power Dissipation at Tamb =25℃, PTOT: 330 mW; (8)Operating and Storage Temperature Range, tj, tstg: -55 to +150℃.
Features
BSS65R features: (1)Maximum collector power dissipation (Pc): 200mW; (2)Maximum collector-base voltage (Ucb): 12V; (3)Maximum collector-emitter voltage (Uce): 12V; (4)Maximum emitter-base voltage (Ueb): 4V; (5)Maximum collector current (Ic max): 100mA; (6)Maximum junction temperature (Tj): 175℃; (7)Transition frequency (ft): 400MHz; (8)Collector capacitance (Cc), Pf: 6; (9)Forward current transfer ratio (hFE), min/max: 40/150; (10)Manufacturer of BSS65R transistor: FERRANTI; (11)Package of BSS65R transistor: TO236; (12)Application: Low Power, Switching, High Frecvency.
Diagrams
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