Product Summary

The GPS40B120U is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

GPS40B120U absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 80A; (3)IC @ TC = 100℃, Continuous Collector Current: 40A; (4)ICM, Pulsed Collector Current: 160 A; (5)ILM, Clamped Inductive Load Current: 160A; (6)IF @ TC = 25℃, Diode Continuous Forward Current: 80A; (7)IF @ TC = 100℃, Diode Continuous Forward Current: 40A; (8)IFM, Diode Maximum Forward Current: 160A; (9)VGE, Gate-to-Emitter Voltage: ± 20 V; (10)PD @ TC = 25℃, Maximum Power Dissipation: 595W; (11)PD @ TC = 100℃, Maximum Power Dissipation: 238W; (12)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃; (13)Soldering Temperature, for 10 sec: 300℃ (0.063 in. (1.6mm) from case).

Features

GPS40B120U features: (1)Non Punch Through IGBT Technology; (2)Low Diode VF; (3)10μs Short Circuit Capability; (4)Square RBSOA; (5)Ultrasoft Diode Reverse Recovery Characteristics; (6)Positive VCE (on) Temperature Coefficient; (7)Super-247 Package.

Diagrams

GPS40B120U block diagram

GPS430
GPS430

Fluke

Calibration Equipment GPS time sync For Fluke 430

Data Sheet

Negotiable