Product Summary

The IRF511 is an N-Channel enhancement mode silicon gate power field effect transistor. The IRF511 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The power MOSFET is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The IRF511 can be operated directly from integrated circuits.

Parametrics

IRF511 absolute maximum ratings: (1)Drain to Source Voltage, VDS: 80V; (2)Drain to Gate Voltage (RGS = 20kΩ), VDGR: 80V; (3)Continuous Drain Current, ID 5.6A; (4)Pulsed Drain Current, IDM: 20A; (5)Gate to Source Voltage, VGS ±20 ±20; (6)Maximum Power Dissipation, PD: 43W; (7)Linear Derating Factor: 0.29W/℃; (8)Single Pulse Avalanche Energy Rating, EAS: 19mJ; (9)Operating and Storage Temperature Range, TJ, TSTG: -55 to 175℃.

Features

IRF511 features: (1)4.9A, and 5.6A, 80V and 100V; (2)rDS(ON) = 0.54 Ω and 0.74 Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance; (8)Related Literature.

Diagrams

IRF511 symbol

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