IRFL4310TRPBF

HEXFET Power MOSFET, SOT223, 2.2A, 0.10 mJ, ± 20 V

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Price:: US $0.90~2.80 / piece [Get Latest Price]

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PartNumber:: IRFL4310TRPBF

Brand:: International Rectifier - IR | Pack: SOT | D/C: 10+

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Products Upload time: 2012-08-16

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Part Number:IRFL4310TRPBF
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Product Summary

The IRFL4310TRPBF is a HEXFET Power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFL4310TRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFL4310TRPBF absolute maximum ratings: (1)ID @ TA = 25℃, Continuous Drain Current, VGS @ 10V: 2.2A; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ 10V: 1.6A; (3)ID @ TA = 70℃, Continuous Drain Current, VGS @ 10V: 1.3A; (4)IDM Pulsed Drain Current: 13A; (5)PD @TA = 25℃, Power Dissipation (PCB Mount): 2.1 W; (6)PD @TA = 25℃, Power Dissipation (PCB Mount): 1.0 W; (7)Linear Derating Factor (PCB Mount): 8.3 mW/℃; (8)VGS, Gate-to-Source Voltage: ± 20 V; (9)EAS, Single Pulse Avalanche Energy: 47 mJ; (10)IAR, Avalanche Current: 1.6 A; (11)EAR, Repetitive Avalanche Energy: 0.10 mJ; (12)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (13)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.

Features

IRFL4310TRPBF features: (1)Surface Mount; (2)Dynamic dv/dt Rating; (3)Fast Switching; (4)Ease of Paralleling; (5)Advanced Process Technology; (6)Ultra Low On-Resistance; (7)Lead-Free.