(China (Mainland))
Product Summary
The NTMD6N03R2G is a Power MOSFET. The applications are DC-DC Converters, Computers, Printers, Cellular and Cordless Phones and Disk Drives and Tape Drives.
Parametrics
NTMD6N03R2G absolute maximum ratings: (1)Drain-to-Source Voltage, VDSS: 30 Volts; (2)Gate-to-Source Voltage, VGS: ±20 Volts; (3)Operating and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (4)Single Pulse Drain-to-Source Avalanche Energy, EAS: 325 mJ; (5)Maximum Lead Temperature for Soldering, TL: 260℃.
Features
NTMD6N03R2G features: (1)Designed for use in low voltage, high speed switching applications; (2)Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life; (3)RDS(on) = 0.024Ω, VGS = 10 V (Typ); (4)RDS(on) = 0.030Ω, VGS = 4.5 V (Typ); (5)Miniature SOIC-8 Surface Mount Package Saves Board Space; (6)Diode is Characterized for Use in Bridge Circuits; (7)Diode Exhibits High Speed, with Soft Recovery; (8)Pb-Free Package is Available.
Diagrams
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 NTMD6N03R2G |
ON Semiconductor |
MOSFET NFET 30V SPCL TR |
Data Sheet |
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