(China (Mainland))
Product Summary
The PTFA080551E V4 is a 55-watt LDMOS FET designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band. Features include input matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon’s advanced LDMOS process, the PTFA080551E V4 provides excellent thermal performance and superior reliability.
Parametrics
PTFA080551E V4 absolute maximum ratings: 1)Drain-Source Voltage, VDSS: 65 V; (2)Gate-Source Voltage, VGS: –0.5 to +12 V; (3)Junction Temperature, TJ: 200℃; (4)Total Device Dissipation, PD: 219 W; (5)Storage Temperature Range, TSTG: –40 to +150℃; (6)Thermal Resistance, RqJC: 0.8℃/W.
Features
PTFA080551E V4 features: (1)Broadband internal matching; (2)Typical EDGE performance: Average output power = 26 W; Gain = 18 dB; Efficiency = 44%; (3)Typical CW performance; Output power at P–1dB = 75 W; Gain = 17 dB; Efficiency = 67%; (4)Integrated ESD protection: Human Body Model, Class 2 (minimum); (5)Excellent thermal stability, low HCI drift; (6)Capable of handling 10:1 VSWR @ 28 V, 55 W (CW) output power; (7)Pb-free and RoHS compliant.
Diagrams
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 PTFA080551E V4 |
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IC FET RF LDMOS 55W H-36265-2 |
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PTFA080551E V4 R250 |
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IC FET RF LDMOS 55W H-36265-2 |
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