Product Summary

The RJK5020 is a Silicon N Channel MOS FET.

Parametrics

RJK5020 absolute maximum ratings: (1)Drain to source voltage, VDSS: 500 V; (2)Gate to source voltage, VGSS: ±30 V; (3)Drain current, ID: 40 A; (4)Drain peak current, ID (pulse): 120 A; (5)Body-drain diode reverse drain current, IDR: 40 A; (6)Body-drain diode reverse drain peak current, IDR (pulse): 120 A ; (7)Avalanche current, IAP: 12.5 A; (8)Avalanche energy, EAR: 8.6 mJ ; (9)Channel dissipation, Pch: 200 W ; (10)Channel to case thermal impedance, θch-c: 0.625℃/W ; (11)Channel temperature, Tch: 150℃; (12)Storage temperature Tstg: –55 to +150℃.

Features

RJK5020 features: (1)Low on-resistance; (2)Low leakage current; (3)High speed switching.

Diagrams

RJK5020 block diagram

RJK5015DPK
RJK5015DPK

Other


Data Sheet

Negotiable 
RJK5033DPD-00#J2
RJK5033DPD-00#J2


MOSFET N-CH 500V 6A MP3A

Data Sheet

0-3000: $0.50
3000-6000: $0.48
6000-15000: $0.47
15000-30000: $0.46
30000-75000: $0.45
RJK5014DPP
RJK5014DPP

Other


Data Sheet

Negotiable 
RJK5012DPP
RJK5012DPP

Other


Data Sheet

Negotiable