Product Summary

The SGW25N120 is a Fast IGBT in NPT-technology.

Parametrics

SGW25N120 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current, IC: 46A; (3)Pulsed collector current, tp: 84s; (4)Turn off safe operating area VCE ≤ 1200V, Tj≤ 150℃: 84A; (5)Gate-emitter voltage VGE: ±20 V; (6)Avalanche energy, single pulse, EAS: 130 mJ; (7)Short circuit withstand time, tSC: 10 μs; (8)Power dissipation, Ptot: 313 W; (9)Operating junction and storage temperature Tj,Tstg: -55 to +150℃.

Features

SGW25N120 features: (1)40% lower Eoff compared to previous generation; (2)Short circuit withstand time 10 μs; (3)Designed for: Motor controls, Inverter, SMPS; (4)NPT-Technology offers: very tight parameter distribution, high ruggedness, temperature stable behaviour, parallel switching capability.

Diagrams

SGW25N120 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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SGW25N120
SGW25N120

Infineon Technologies

IGBT Transistors FAST IGBT NPT TECH 1200V 25A

Data Sheet

0-1: $5.53
1-10: $4.60
10-100: $3.57
100-250: $3.37
SGW25N120E8161
SGW25N120E8161

Infineon Technologies

IGBT Transistors FAST IGBT NPT TECH 1200V 25A

Data Sheet

0-1: $3.55
1-5: $2.97
5-15: $2.67
15-30: $2.38