Product Summary

The VN10KM is an N channel enhancement mode MOS transistor. The applications are drivers, battery operated systems, solid-state relays and inductive load drivers.

Parametrics

VN10KM absolute maximum ratings: (1)drain source voltgage, VDS: 60V; (2)gate-source votlage, VGS: 15/-0.3V; (3)pulsed drain current, IDM: 1A; (4)power dissipation, PD: 1W; (5)maximum junction to ambient, RthJA: 125℃/W; (6)operating junction and storage temperature range, Tj, Tstg: -55 to 150℃.

Features

VN10KM features: (1)zener diode input protected; (2)low on resistance; (3)ultralow threshold; (4)low input capacitance; (5)low input and output leakage.

Diagrams

VN10KM block diagram

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Other


Data Sheet

Negotiable 
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Data Sheet

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Data Sheet

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